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IRF840L, SiHF840L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
62
1.0
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 500 V, V GS = 0 V
V DS = 400 V, V GS = 0 V, T J = 125 °C
500
-
2.0
-
-
-
-
0.78
-
-
-
-
-
-
4.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 4.8 A b
-
-
0.85
?
Forward Transconductance
g fs
V DS = 50 V, I D = 4.8
A b
4.9
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
1300
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
310
120
-
-
-
63
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 8 A, V DS = 400 V
see fig. 6 and 13 b
-
-
9.3
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
14
32
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 250 V, I D = 8.0 A
R g = 9.1 ? , R D = 31 ?? , see fig. 10 b
-
-
-
23
49
20
-
-
-
ns
Internal Drain Inductance
Internal Source Inductance
L D
L S
Between lead,
6 mm (0.25") from
package and center of
die contact
G
D
S
-
-
4.5
7.5
-
-
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I S
MOSFET symbol
showing the
D
-
-
8.0
integral reverse
G
A
Pulsed Diode Forward Current a
I SM
p - n junction diode
S
-
-
32
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = 8 A, V GS = 0 V b
T J = 25 °C, I F = 8.0 A, dI/dt = 100 A/μs b
-
-
-
-
460
4.2
2.0
970
8.9
V
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
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Document Number: 91069
S10-2554-Rev. B, 08-Nov-10
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